Analytical Model for the n-Channel MOSFET’s Surface Potential Considering QM Effects in Valence and Conduction Band

Abstract

Incorporating quantum mechanical (QM) effects into nMOSFETs with a 100 Si surface orientation is suggested in this work through a physics-based analytical model that takes into account the triangular potential well approximation in the valence and conduction bands. The model's surface potential is valid for a large range of device parameters, is continuous, and smooth from the accumulation area to the strong inversion region; it also does not need fitting parameters or smoothing functions. These model's C_G versus V_GB properties, as well as the surface potential, electron density, and hole density in their respective operating zones, agree extremely well with the published findings of self-consistent solutions to the Schrödinger and Poisson equations. There is a strong agreement between the numerically acquired data from the generated implicit expression and the surface potential values calculated using the simplified analytical model and its derivative.