K V JYOTHI PRAKASH; G S JAYADEVA. Analytical Model for the n-Channel MOSFET’s Surface Potential Considering QM Effects in Valence and Conduction Band. International Journal of Computer Information Systems and Industrial Management Applications, [S. l.], v. 18, n. 20s, p. 603–616, 2026. DOI: 10.70917/ijcisim-2026-5202. Disponível em: https://cspub-ijcisim.org/index.php/ijcisim/article/view/5202. Acesso em: 29 aug. 2026.